DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues
نویسندگان
چکیده
The performance and reliability implications of DC-to-RF dispersion effects are addressed. The proposed physical explanations and technological counteractions are reviewed. GaAsand GaN-based FET technologies are considered, trying to point out both similar and peculiar aspects. * Corresponding author. [email protected] Tel: +39 059 205 6160; Fax: +39 059 205 6160.
منابع مشابه
Highly doped thin-channel GaN-metal–semiconductor field-effect transistors
We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...
متن کاملTrapping Effects in GaN and SiC Microwave FETs
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide bandgap devices. In this paper, we review the various trapping phenomena observed in SiCand GaNbased FETs that contribute to compromised power performance. For both of these material systems, trapping effects associated with both the ...
متن کاملDegradation Mechanisms for GaN and GaAs High Speed Transistors
We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field ...
متن کاملProcess-Reliability Relationships in GaN and GaAs Field Effect Transistors and HFETs
Although accelerated life testing of low noise and power GaAs MESFETs under d.c. bias and RF operation has been conducted, some failure mechanisms remain to be of concern. We will address these concerns and will report on failure models of AlGaAs/GaAs HFETs. The set of reliability physics models then will form the starting point for development of physics based failure models for GaN HFETs devi...
متن کاملCombined effects of pressure, temperature, and magnetic field on the ground state of donor impurities in a GaAs/AlGaAs quantum heterostructure
In the present work, the exact diagonalization method had been implemented to calculate the ground state energy of shallow donor impurity located at finite distance along the growth axis in GaAs/AlGaAs heterostructure in the presence of a magnetic field taken to be along z direction. The impurity binding energy of the ground state had been calculated as a function of confining frequency and mag...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 45 شماره
صفحات -
تاریخ انتشار 2005